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SKKT280/22EH4

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產(chǎn)品型號SKKT280/22EH4

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所在地深圳市

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更新時間：2016-07-02 14:50:31瀏覽次數(shù)：202次

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深圳市邁瑞施電子技術(shù)有限公司

經(jīng)營模式：代理商

商鋪產(chǎn)品：987條

所在地區(qū)：廣東深圳市

聯(lián)系人：曾先生（銷售技術(shù)經(jīng)理）

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產(chǎn)品簡介

SKKT280/22EH4品牌：西門康又名賽米控Semikron；
產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

詳細(xì)介紹

SKKT280/22EH4品牌：西門康又名賽米控Semikron；

SKKT280/22EH4產(chǎn)地：*；

PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數(shù)據(jù) / Preliminary Data

深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進口 * 現(xiàn)貨批發(fā)零售的企業(yè)，

更詳細(xì)的內(nèi)容敬請登錄公司了解。www.mrs2003。。ｃｏｍ

VCES = 1200V

IC nom = 323A / ICRM = 323A

典型應(yīng)用 Typical Applications

• 斬波應(yīng)用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩(wěn)定性 • High DC Stability

• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數(shù) Circuit Current

• VCEsat with positive Temperature Coefficient

• 低 VCEsat • Low VCEsat

機械特性 Mechanical Features

• 4 kV 交流 1分鐘絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

• 低熱阻襯底 • Substrate for Low Thermal Resistance

SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D

SKD160/16 SKKD101/16 SKKH250/18E SKKT330/12E SKM300GB125D

SKD160/18 SKKD105F08 SKKH273/12E SKKT330/16E SKM300GB126D

SKD210/08 SKKD105F10 SKKH273/16E SKKT330/18E SKM300GB12E4

SKD210/12 SKKD105F12 SKKH280/20EH4 SKKT430/16E SKM300GB12T4

SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V

SKD210/18 SKKD115F14 SKKH323/12E SKKT460/22EH4 SKM300GBD12T4

SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4

SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V

SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D

SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D

SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D

SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4

SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D

SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D

SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D

SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D

SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4

IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

集電極－發(fā)射極電壓	Tvj = 25°C	VCES	1200	V
Collector-emitter voltage


連續(xù)集電極直流電流	TC = 100°C, Tvj max = 175°C	IC nom	323	A
Continuous DC collector current


集電極重復(fù)峰值電流	tP = 1 ms	ICRM	1800	A
Repetitive peak collector current


總功率損耗	TC = 25°C, Tvj max = 175°C	Ptot	5,10	kW
Total power dissipation


柵極－發(fā)射極峰值電壓		VGES	+/-20	V
Gate-emitter peak voltage

特征值 / Characteristic Values					min.	typ.	max.
集電極－發(fā)射極飽和電壓	IC = 900 A, VGE = 15 V		Tvj = 25°C			1,70	2,05	V
Collector-emitter saturation voltage	IC = 900 A, VGE = 15 V		Tvj = 125°C	VCE sat		2,00		V
	IC = 900 A, VGE = 15 V		Tvj = 150°C			2,10		V

柵極閾值電壓	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage

柵極電荷	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge

內(nèi)部柵極電阻	Tvj = 25°C			RGint		1,2		W
Internal gate resistor	Tvj = 25°C			RGint		1,2		W
Internal gate resistor

輸入電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance

反向傳輸電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance



開通延遲時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td on		0,20		µs
Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,22		µs

	RGon = 1,6 W		Tvj = 150°C			0,22		µs

上升時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tr		0,14		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C	tr		0,15		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C			0,15		µs
	RGon = 1,6 W		Tvj = 150°C			0,15		µs

關(guān)斷延遲時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td off		0,70		µs
Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,80		µs

	RGoff = 1,6 W		Tvj = 150°C			0,85		µs

下降時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tf		0,20		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C	tf		0,40		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C			0,40		µs
	RGoff = 1,6 W		Tvj = 150°C			0,45		µs

開通損耗能量 (每脈沖)	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			50,0		mJ
Turn-on energy loss per pulse	VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C			Eon		70,0		mJ
	RGon = 1,6 W		Tvj = 150°C			80,0		mJ

關(guān)斷損耗能量 (每脈沖）	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			150		mJ
Turn-off energy loss per pulse	VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C			Eoff		200		mJ
	RGoff = 1,6 W		Tvj = 150°C			205		mJ

短路數(shù)據(jù)	VGE £ 15 V, VCC = 800 V			ISC
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C		ISC		3600		A
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C				3600		A
結(jié)－外殼熱阻	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個 IGBT / per IGBT			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關(guān)狀態(tài)下溫度				Tvj op	-40		150	°C

Diode-斬波器 / Diode-Chopper

zui大額定值 / Maximum Rated Values

反向重復(fù)峰值電壓	Tvj = 25°C	VRRM	1200	V
Repetitive peak reverse voltage


連續(xù)正向直流電流		IF	900	A
Continuous DC forward current


正向重復(fù)峰值電流	tP = 1 ms	IFRM	1800	A
Repetitive peak forward current


I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	150	kA²s
I²t - value	VR = 0 V, tP = 10 ms, Tvj = 150°C		145	kA²s

特征值 / Characteristic Values				min.	typ.	max.
正向電壓	IF = 900 A, VGE = 0 V	Tvj = 25°C			1,65	2,15	V
Forward voltage	IF = 900 A, VGE = 0 V	Tvj = 125°C	VF		1,55		V
	IF = 900 A, VGE = 0 V	Tvj = 150°C			1,50		V

反向恢復(fù)峰值電流	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			560		A
Peak reverse recovery current	VR = 600 V	Tvj = 125°C	IRM		770		A
		Tvj = 150°C			820		A

恢復(fù)電荷	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			110		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr		200		µC
		Tvj = 150°C			225		µC

反向恢復(fù)損耗（每脈沖）	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			50,0		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec		90,0		mJ
		Tvj = 150°C			105		mJ

結(jié)－外殼熱阻	每個二極管 / per diode		RthJC			37,0	K/kW

反向二極管 / Diode, Reverse

zui大額定值 / Maximum Rated Values

反向重復(fù)峰值電壓	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage

連續(xù)正向直流電流		IF	120		A


正向重復(fù)峰值電流	tP = 1 ms	IFRM	240		A
Repetitive peak forward current	tP = 1 ms	IFRM	240		A
Repetitive peak forward current

I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s
I²t - value	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s