主要特點(diǎn)

Main feature

? Under the vacuum condition , a RF power supply acts on the rare gas in the vacuum chamber to form the plasma equivalent glow effect ( PECVD patent of our company ) , and the field energy of the plasma replaces the thermal energy , so that the growth temperature of the graphene is reduced , and the process conditions are improved .

該設(shè)備在真空條件下，通過(guò)射頻電源作用于真空腔室內(nèi)的稀薄氣體，形成等離子體等效輝光作用下（本公司PECVD），利用等離子體的場(chǎng)能部分代替了熱能，從而降低石墨烯生長(zhǎng)溫度，改善工藝條件。

? Achieve growth of high quality graphene thin films by controlling nucleation and growth of graphene

通過(guò)對(duì)石墨烯成核與生長(zhǎng)的調(diào)控實(shí)現(xiàn)高品質(zhì)石墨烯薄膜生長(zhǎng)

? In this method, copper foil is used as a base, motor drives copper foil to move under closed growth condition, and then it passes through the first temperature zone (annealed area). Graphene will deposit on the copper foil on the second, third temperature zone (growth area)ａnd tighten to the roll by the cooling device 該方法使用銅箔作為基底，電機(jī)帶動(dòng)銅箔在密閉生長(zhǎng)條件下運(yùn)動(dòng)，經(jīng)過(guò)溫區(qū)（退火區(qū)）處理后的銅箔；在第二、第三溫區(qū)（生長(zhǎng)區(qū)）石墨烯將沉積在銅箔上，并通過(guò)冷卻裝置后收緊成卷。

? With the advantages of rapid cooling and continuous growth, and can be used for large-scale growth of graphene with large area and high quality.

相對(duì)于現(xiàn)有技術(shù)具有快速冷卻、連續(xù)生長(zhǎng)的優(yōu)點(diǎn)，可以進(jìn)行大面積、高質(zhì)量石墨烯的規(guī)?；L(zhǎng)。

技術(shù)參數(shù)