The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME4410A是采用高密度DMOS溝道技術(shù)制作的N通道邏輯增強(qiáng)型功率場效應(yīng)晶體管。這種高密度工藝特別適合于最小化導(dǎo)通電阻。這些設(shè)備特別適用于低電壓應(yīng)用,如蜂窩電話和筆記本電腦電源管理和其他電池供電電路,在非常小的外形表面貼裝封裝中,需要高側(cè)開關(guān)和低壓功耗。
● RDS(ON)=14mΩ@VGS=10V
● RDS(ON)=22mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應(yīng)用:
●筆記本中的電源管理
●便攜式設(shè)備
●電池供電系統(tǒng)
●DC/DC轉(zhuǎn)換器
●負(fù)荷開關(guān)
●差示掃描量熱儀