The ME4417 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
ME4417是P通道邏輯增強(qiáng)型功率場效應(yīng)晶體管,采用高密度DMOS溝道技術(shù)制造。這種高密度工藝特別適合于將導(dǎo)通電阻降到。這些器件特別適用于低電壓應(yīng)用,如手機(jī)和其他電池供電電路一個(gè)非常小的外形表面安裝包。
● RDS(ON)≦8.6mΩ@VGS=-20V
● RDS(ON)≦9.6mΩ@VGS=-10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應(yīng)用:
●筆記本中的電源管理
●電池供電系統(tǒng)
●DC/DC轉(zhuǎn)換器低壓側(cè)開關(guān)
●負(fù)荷開關(guān)